| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Arsenic Free Ovonic Threshold Switch (OTS) for Next Generation Memories |
| 초록 | New memory devices such as PcRAM (phase change random access memory) and ReRAM (resistance switching random access memory) based on 3D crossbar array attracts great interests for next generation memories. However, 3D crossbar arrays suffer from a sneak current that leads a reading failure in the cell. In addition, new memory device such as PcRAM needs high current density for a successful writing of the cell. In this regard, selectors such as ovonic threshold switch (OTS) that performs with high selectivity and high current density are necessary for high performance new memories. Up to date, multi-component materials (e.g. As-Ge-Te-Si-N) were proposed for the operation of OTS devices. However, the OTS device contains the Arsenic element, which is highly toxic element. In this work, we propose OTS selectors using Arsenic free material grown by RF sputtering on TiN electrode. Our devices exhibited a typical OTS characteristics with high selectivity and large current density. Our eco-friendly OTS selectors can provide a new technological opportunity in the development of next generation memories. More detailed results will be addressed in the presentation. |
| 저자 | Myoung-Su Seo1, Sung Min Kim2, Hye Ju Kim1, Sang Woon Lee2 |
| 소속 | 1Department of Physics and Department of Energy Systems Research, 2Ajou Univ. |
| 키워드 | <P>Selector; OTS; NDR effect; Chalcogenide material</P> |
