| 초록 |
The multi-bit opertaion which means a certain single memory cell can store more than two (0 or 1) digital state is essential characteristic for future non-volatile memory or brain-inspired neuromorphic applications. However, the stochactic nature of resistive switching (RS) phenomenon in various materials has been a great obstacle for achieving the highly reliable multi-bit operation. To solve this crucial problem, error-check and correction algorithm was adoped, and 4-bit operation was successfully achieved with 6σ of state-overlap-probability in a HfO2 based RS device. Moreover, to achieve the energy-efficient characteristic as well as reliability simultaneously, insertion of Al2O3 thin film layer or applying W electrode were examined for low operational error rate and bi-directional multi-bit operation, respectively. The obtained results can be a optimistic step for realizing future non-volatile memory applications. The detailed experimental procedures and results will be discussed in conference. |
