| 학회 |
한국재료학회 |
| 학술대회 |
2010년 가을 (11/11 ~ 11/12, 무주리조트) |
| 권호 |
16권 2호 |
| 발표분야 |
F. Display and optic Materials and processing(디스플레이 및 광 재료) |
| 제목 |
ANTIMONY SURFACTANT EFFECT ON GREEN EMISSION InGaN/GaN MULTI QUANTUM WELLS GROWN BY MOCVD |
| 초록 |
An improvement in the optical and structural properties of green emitting InGaN/GaN Multi Quantum Wells (MQWs) was obtained by using antimony (Sb) as a surfactant during InGaN growth. Keeping the growth conditions for InGaN constant, Sb was introduced during InGaN growth while varying the [Sb]/([In]+[Ga]) flow ratio from 0 to 0.16%. The analysis results suggest that using the optimum [Sb]/([In]+[Ga]) ratio (0.04%-0.1%) during InGaN growth greatly improves the optical and structural properties of the MQWs without incorporating much Sb into the growing film and that the emission wavelength is also maintained with a slight blue shift. |
| 저자 |
이영곤1, Giri Sadasivam Karthikeyan1, 백광선1, 이준기2
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| 소속 |
1전남대, 2전남대 신소재공학과 |
| 키워드 |
Sb surfactant; InGaN/GaN MQW growth
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| E-Mail |
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