| 학회 |
한국고분자학회 |
| 학술대회 |
2022년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
47권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Tailoring electrical properties of MoS2 FETs with spatially controlled surface charge transfer doping via selective inkjet printing |
| 초록 |
Surface charge transfer doping (SCTD) has been studied to tailor the electrical properties of molybdenum disulfide (MoS2)-based devices because the 2-dimensional (2D) materials with atomically thin nature are highly sensitive to the SCTD. However, the facilitating spatially selective doping on 2D devices for complementary logic devices is a remaining challenge because typically controllable SCTD effects depend on the immersion time and doping concentration. In this work, we will present the spatially controllable SCTD of MoS2 field-effect transistors (FETs) by drop-on-demand selective inkjet printing. To control SCTD of MoS2 FET, we introduced the inkjet printing with well-defined ink droplet with benzyl viologen (BV) dopants. The inkjet printing with the high degree of design freedom and various doping concentration enables the gradual enhanced electrical properties of doped MoS2 FET as increased doping area and doping concentration. |
| 저자 |
정인호1, 조경준1, 윤서빈1, 신지원2, 김재영2, 김규태3, 이탁희2, 정승준1
|
| 소속 |
1한국과학기술(연), 2서울대, 3고려대 |
| 키워드 |
molybdenum disulfide; chemical doping; surface charge transfer doping; inkjet printing; field-effect transistor
|
| E-Mail |
|
