| 학회 | 한국재료학회 |
| 학술대회 | 2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 | 26권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | High quality GaN layer grown on boron nitride nanotubes as inserting layers |
| 초록 | Epitaxial lateral overgrowth (ELOG) is one of the effective approaches widely employed for the growth of high-quality GaN with reduced stress and defect density, by using substrate patterning or employing patterned buffer layers such as SiO2 or SiNx. However, given the process complexity and unfavorable effect of such low thermal conductivity materials, more simplified approaches are being developed. Nanomaterials have attracted significant interest, for instance, boron nitride nanotubes (BNNTs) has recently evolved as a buffer layer to grow GaN layers with high crystal quality. In this study, a facile method is developed for strain relaxation in hetero-epitaxial growth of GaN LED structures by using one-dimensional BNNTs. Significant reduction was achieved in threading dislocations and in-plane residual stress. Micro-Raman, photoluminescence, AFM, and high resolution X-ray diffraction results revealed conspicuous improvement in the crystal and optical quality of the GaN epilayer. These results signify that the BNNTs serve as natural nanomasks for ELOG. |
| 저자 | Eun Mi Kim, Chil-Hyoung Lee, Su Jin Kim, Jongho Lee, Tae Hoon Seo |
| 소속 | Korea Institute of Industrial Technology |
| 키워드 | Epitaxial lateral overgrowth(ELOG); GaN; boron nitride nanotubes(BNNT); LED |
