| 초록 |
Phase-field method (PFM) is the most efficient to model grain growth that is ubiquitous in material processings. There are many reports for bulk samples. The PFM results coinsides with classical theory and many experimental validations were performed. When it comes to nanoscale films that are usually in contact with different materials and sometimes have nonplanar geometry, the situation becomes more complicated. Boundary conditions should be carefully revised for each modeling case. In this work, we investigated a thin film deposited on a sidewall of a circular hole, which is the case of the polysilicon channel of vertical NAND flash memory. Governing equations were solved using finite difference method. Grain size variation by film thickness and three interfacial parameters such as film/air, film/substrate, and grain boundary within the film will be presented. |
