| 초록 |
We investigated the effect of acid additives such as Acetic Acid(AA), 4-trifluoromethyl benzoic acid (CF3BA), trifluoroacetic acid (CF3AA), and 4-toluene sulfonic acid (TsOH) in PFN on device performance. Inverted PSCs have fabricated a blend of PTB7-Th and PC71BM as the active layer and PFN with different amounts and types of acid derivatives as the CBL. we found the optimum amount of acid derivatives to be 1.0 eq. The PCE of the device with ZnO was 8.7%, whereas the PCEs of the devices with 1.0eq. of AA, CF3BA, CF3AA, and TsOH were 9.9, 10.3, 10.3, and 10.6%, respectively. The FF and PCE of the devices were affected by the acid dissociation constant of the acid derivative.PFN with acid derivatives devices showed interfacial bimolecular and reduced trap-assisted recombination. Especially, the trend of the PCEs of PSCs agrees well with the reduced trap-assisted recombination of the devices and follows the trend of the acid dissociation constant of acid derivatives. |
