| 학회 |
한국고분자학회 |
| 학술대회 |
2022년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
47권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
High Mobility Low-voltage Operation in Anion Doped Single-walled Carbon Nanotube (Single-walled carbon nanotube) Network n-type Field Effect Transistors (CNTFETs) |
| 초록 |
Solution-processed semiconductor doping would be a powerful strategy in order to improve carbon nanotube field-effect transistors (CNTFETs) performance. CNTs are promising material for high performance, large area printable thin film transistors. However, ambipolar property of SWNTs have drawbacks in CMOS-like circuits such as large static power consumption. N-type doping is more challenging issue in solution processed FETs rather than p-type. We sorted large diameter semiconducting-SWNTs with the high purity from as-grown mixed-type SWNTs using conjugated polymer. Selectively sorted s-SWNTs and Lewis base anion dopant were simply spin coated for active layer. We successfully conducted CNTFETs n-type doping and it was revealed optically such as UPS, UV-VIS-NIR and Raman spectroscopy. The devices were also electrically analyzed using contact resistance and carrier concentration. Doped CNTFETs were operated only at Vd of 0.5 V and 1.7 folds mobility increment was achieved. |
| 저자 |
양동성, 문이나, 한나라, 이민우, 김영효, 김동유
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| 소속 |
광주과학기술원 |
| 키워드 |
carbon nanotube; field-effect transistor; doping
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| E-Mail |
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