| 초록 |
ReRAM (Resistive switching Random Access Memory) array with a crossbar structure is a promising method for extremely high storage density. However, there is a problem of sneak current since each cell in the crossbar structure shares the line shaped electrodes. Cu2O nanoparticle film with amorphous matrix is a good material for the active layer due to high uniformity, stability, and electroforming-free property. The conditions of electrodeposition process like applied potential, stirring rate, temperature, and pH of electrolyte effect to the rection to proceed non-stoichiometrically. Especially, two metal precursors (Pb and Sb) that effects to form the amorphous matrix of the nanoparticles are activated at different potential ranges. We electrodeposited Cu2O nanoparticle films from -0.25V to -0.45V and compared the electrical property and morphological of each film. As increasing the overpotential, the size of nanoparticles decreased and density and conductivity of Cu2O film increased. We checked the Cu2O film electrodeposited at high overpotential has smaller set voltage and lower power consumption. We stacked double layer the Cu2O film that each layer has different resistive switching performance by applying 2 step reduction potential. The double layered ReRAM device has an excellent self-rectifying property and 2-step set operation. Self-rectifying ReRAM device and suppress the sneak current path without additional devices. 2-step set operation can be used for self-compliance operation without compliance transistors. |
