| 학회 | 한국재료학회 |
| 학술대회 | 2005년 가을 (11/10 ~ 11/11, 한양대학교) |
| 권호 | 11권 2호 |
| 발표분야 | 반도체재료 |
| 제목 | SixGe1-x 중간층위에 자기조립 Ge양자점의 형성 |
| 초록 | Ge self-assembled quantum dots (SAQDs) grown on a relaxed Si0.75Ge0.25 buffer layer were observed using an atomic force microscopy (AFM) and a transmission electron microscopy (TEM). The effect of buried misfit dislocations on the formation and the distribution of Ge SAQDs was extensively investigated. The Burgers vector of each buried dislocation was determined using the g∙b=0 invisibility criterion with plane-view TEM micrographs, which shows that Ge SAQDs grow at specific positions related to the Burgers vectors of buried dislocations. The measurement of the lateral distance between a SAQD and the corresponding misfit dislocation with plane-view and cross-sectional TEM images reveals that SAQDs form at the intersections of the top surface with the slip planes of misfit dislocations. The stress field on the top surface due to misfit dislocations is computed, and it is found that the strain energy of the misfit dislocations provides the preferential formation sites for Ge SAQDs nucleation. Fig. 1. AFM images of Ge SAQDs showing distribution of Ge quantum dots in the presence of a buried misfit dislocation network |
| 저자 | 장준연1, 김형준2, 신찬선1 |
| 소속 | 1Nano Device Research Center, 2Korea Institute of Science and Technology |
| 키워드 | Ge양자점; 자리조립; MBE |
