| 학회 |
한국재료학회 |
| 학술대회 |
2021년 봄 (05/12 ~ 05/14, 광주 김대중컨벤션센터) |
| 권호 |
27권 1호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Boron Doped Polysilicon Using Spin-on Process for Passivated Emitter |
| 초록 |
Due to the increase in wafer quality, much of the efficiency loss comes from the recombination at the emitter and metal silicon interface which leads to the importance of passivation. By using boron-doped poly-Si/SiOx as a front contact less parasitic absorption will happen compared to amorphous silicon and at the same time decrease recombination loss. In this study boron-doped poly-Si by using spin-on dopants (SODs) is proposed. The advantages of using spin-on dopants are easy doping of boron without toxic substance needed, controllable doping concentration, and cheap cost. High-temperature diffusion is done in a furnace after the application of the boron source on the poly-Si/SiOx structure. Here, the growth of SiOx was fixed to wet-chemical growth, and variation was given at the diffusion temperature, boron source concentration, and poly-Si thickness. The boron concentration in the poly-Si and the amount of diffusion into the silicon was checked with the SIMS profile and the passivation quality was characterized by using parameters such as Jo and iVoc from the QSSPC to optimize the boron-doping process of poly-Si through SODs. |
| 저자 |
김진솔1, 최동진1, 박현정1, 강동균1, 강윤묵2, 이해석2, 김동환1
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| 소속 |
1고려대, 2KU-KIST 그린스쿨 대 |
| 키워드 |
<P>Boron; emiiter; spin-on doping; passivated contact</P>
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| E-Mail |
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