| 초록 |
The MEMS-based FET sensors for hydrogen detection were fabricated by modifying the gate electrode with boron nitride nanotubes (BNNTs) decorated Pd-ternary alloy (Pd63.2Ni34.3Co2.5) as H2 sensing layer. Electrothermal properties of the embedded micro-heater inside the sensing platform were analyzed by finite element method (FEM) simulations. Structural and morphological properties of the gate electrode were studied by Raman spectroscopy and field emission scanning electron microscopy (FESEM). A variation in gate potential is observed due to the H2 atmosphere that leads to the variation in the depletion region, therefore, changing the current in the channel (BNNTs decorated Pd-ternary alloy). The BNNTs decorated Pd ternary alloy displayed high sensing response, good linear response with H2 concentration, low power consumption, long-term stability, and a broad H2 detection range from 1 to 5,000 ppm. As proposed H2 FET sensor can be utilized to the H2 leak detection system for safe applications. |
