| 초록 |
Copper oxides have been attracted considerable attention because of favorable intrinsic characteristics such as environmental-friendly, low-cost and reconfigurable electronic structure. Among the various Copper oxides, cuprous oxide (Cu2O) and cupric oxide (CuO) are well known for many kind of applications due to its attractive electrical characteristics. For example, Cu2O and CuO show P-type characteristic when they have crystalline structure of cubic and monoclinic, respectively, and their combination can be utilized in various applications such as gas sensor, photodiode, anode materials in batteries, thin film transistors (TFTs), solar cells and photo-catalysts. Until now, however, atomic layer deposition (ALD) based thin film fabrication of Cu2O and CuO have not been seriously studied yet. In this research, Cu2O and CuO thin films were successfully deposited by ALD technique using novel Cu(dmamb)2 (bis(1-dimethylamino-2-methyl-2-butoxy)copper) precursor for copper source, and H2O and O3 for oxygen source, respectively. To clarify the structural and electrical characteristics of individual thin films, X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), and X-ray fluorescence (XRF) analyses were performed. All the analyses results demonstrated that Cu2O and CuO thin films have cubic and monoclinic structure with low C-impurity in it. The XPS measurement also showed consistent result with XRD analysis. The electrical characteristic was investigated using UV-Visible (ultraviolet-visible) spectroscopy, and it was revealed that each thin film has favorable optical band-gap. We believe that ALD Cu2O and CuO thin films can be applied to various devices including TFTs, catalyst, anode material in batteries, etc. The more detailed experimental procedures and physical/chemical characterization results of thin films will be introduced in presentation. |
