| 초록 |
The g-C3N4/BiVO4 composites enable to form the Z-scheme charge transfer structure under the visible light region. These materials have low‐cost and suitable band gap at 2.83eV and 2.43eV, respectively. However, they suffer the low charge transportation efficiency and stability. If it fabricates proper Zinc oxide (ZnO) thin-layers with the wide band position, we expects to enhance photoelecrochemical(PEC) performance using the visible light. The g-C3N4 was synthesized by using urea and thourea for porous heterostructures, and solutions can be easily fabricated onto the FTO glass by sol-gel method in this study. The decoration of ZnO can enhance PEC performances, which attributed to the fast photon mobility between g-C3N4/BiVO4 and ZnO semiconductors. Furthermore, the g-C3N4/BiVO4/ZnO photoanodes inhibits the photogenerated electron–hole pair recombination. Our results indicate that the g-C3N4/BiVO4/ZnO semiconductor provides versatile photoelectrochemical properties for design of active photoanodes and promising electrode materials for the PEC abilities |
