| 학회 | 한국재료학회 |
| 학술대회 | 2021년 봄 (05/12 ~ 05/14, 광주 김대중컨벤션센터) |
| 권호 | 27권 1호 |
| 발표분야 | C. 에너지 재료 분과 |
| 제목 | The Effect of i-ZnO Thickness on The Performance of VTD-SnS/CBD-CdS Thin-film Solar Cells |
| 초록 | Orthorhombic tin monosulfide (SnS) having optical band gap (~1.35 eV), high absorption coefficient (˃104) is promising absorber material for thin-film solar cells (TFSCs), comprises of relatively earth abundant and non-toxic constituents. The theoretical efficiency limit of SnS is ~32%, but the reported cell efficiency has mostly remained below 4% which is fairly low as compared to theoretical. The relatively low efficiency of SnS solar cells is mainly attributed to the low heterojunction quality with CdS buffer layer and short circuit loss. In this study, the effect of i-ZnO thickness on vapor transport deposited (VTD) SnS TFSCs has been investigated. The i-ZnO deposition was carried out using the RF magnetron sputter at room temperature. In order to change the thickness of i-ZnO, the deposition time was varied form 1400 to 2400 seconds. The thickness was observed between 40 and 65 nm. The highest efficiency of 3.51% (VOC = 0.334 V, JSC = 18.81 mA-cm-2, and FF = 56% ) was obtained for 45 nm thick i-ZnO layer. The efficiency was decreased with increase in i-ZnO thickness above 45 nm. These improved characteristics are attributed to the reduction in shunt conductance with i-ZnO thickness. The detailed analysis of the device performance will be presented for different i-ZnO thickness. |
| 저자 | Rahul Kumar Yadav, 허재영 |
| 소속 | 전남대 |
| 키워드 | <EM>i</EM>-ZnO Thickness; VTD-SnS; Solar cells |
