| 학회 |
한국고분자학회 |
| 학술대회 |
2021년 가을 (10/20 ~ 10/22, 경주컨벤션센터) |
| 권호 |
46권 2호 |
| 발표분야 |
Virtual Lightning Session |
| 제목 |
Spatial Raman Mapping to Probe Size Dependent Electron-phonon Interaction in Silicon Nanostructures |
| 초록 |
Cross-sectional Raman mapping has been performed on heavily doped p and n type fractal silicon (Si) nanostructures (SiNSs) to probe size gradient and size dependent electron-phonon interaction. The time dependent progression of metal assisted chemical etching to etch different portion of silicon wafer at different times leads to change in ilicon nanostructures’ size across the nanowire. Cross sectional Raman mapping has been employed to validate the size gradient established due to etching. A systematic Raman line shape analysis obtained from the consolidated Raman map shows an anomalous size dependent electron phonon coupling variation parametrized using Raman line shape analysis and electron-phonon coupling parameter q. |
| 저자 |
Chanchal Rani, Manushree Tanwar, Rajesh Kumar
|
| 소속 |
Indian Institute of Technology Indore |
| 키워드 |
- |
| E-Mail |
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