| 학회 |
한국재료학회 |
| 학술대회 |
2021년 봄 (05/12 ~ 05/14, 광주 김대중컨벤션센터) |
| 권호 |
27권 1호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Systematic Fabrication of Native oxide (β-Ga2O3) integrated from GaN photoanode introduce Interfacial Passivation against photocorrosion for Photoelectrochemical Water Oxidation |
| 초록 |
We report the rational synthesis of chemically modified GaN film, and their implementation as photoanodes in photoelectrochemical (PEC) cells for water oxidation. At first, GaN film surface is modified by a simple etching process to introduce native oxide. The films contain a homogeneous distribution of β-Ga2O3 with compositions that can be accurately controlled ∼4% by varying the etching time. Mott-Schottky measurements on a representative sample give a flat-band potential of -0.6 VRHE, a carrier density of ∼3.1 × 1018 cm-3. β-Ga2O3 layer formation grown by self-chemical anodization prevents corrosion, electronic defects promote hole conduction, and we show that the protected semiconductors are transparent enough to achieve finite performance. β-Ga2O3/GaN photoelectrode exhibited a photovoltage of 0.9VRHE for water oxidation. The high photovoltage was attributed to a high built-in potential in a metal-insulator-semiconductor. Along with a thin layer of Ga2O3 upon GaN exhibited a continuous oxidation of 0.5 M aqueous NaOH to O2 for more than 10 h at photocurrent densities of ~1.5 mA/cm2.We show that passivation layers have been used as an effective strategy to improve the charge-separation and transfer processes across semiconductor–liquid interfaces, and thereby increase overall solar energy conversion efficiency. |
| 저자 |
강순형1, maheswari arunachalam2
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| 소속 |
1전남대, 2Chonnam national Univ. |
| 키워드 |
PEC water oxidation; Semiconductor; GaN; surface passivation
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| E-Mail |
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