| 초록 |
Solution-processed, high-speed, and polarity-selective organic vertical Schottky barrier (SB) transistors and logic gates are presented. The organic layer, which is a bulk heterojunction (BHJ) composed of PBDB-T and PC71BM, is employed to simultaneously realize vertical electron and hole transports through the separate p-channel and n-channel. The gate-modulated graphene work functions enable broad modulation of SB heights at both the graphene–PBDB-T and graphene–PC71BM heterointerfaces. Interestingly, the fine-tuned energy-level alignment enables an exclusive injection of holes or electrons unlike conventional BHJ-based ambipolar transistors, leading to a clear transition between p-channel and n-channel single-carrier-like transistor characteristics. Furthermore, the improved percolation-limited dual charge transport in vertical architecture results in high charge carrier density and high-speed on–off switching characteristics |
