| 초록 |
A memristor has been becoming one of the strong device candidates for the next-generation memory technology [1,2]. Diverse resistance states in the memristor can be made and retained because the active material can be dynamically reconfigured by external electrical stimuli. [1,2]. Interestingly, the memristor can exhibit various switching characteristics depending on the different junction structures and programming ways. Among them, very few memristors have exhibited a non-pinched (non-zero-crossing) switching behavior due to the coupled capacitive effect [3]. Since this type of memristors has been rarely reported and the switching mechanism driven by capacitive-coupled memristive effect is also not sufficiently dealt with, it is worth to further investigate and understand the non-pinched switching characteristics in the memristor. In this study, we have designed and fabricated a non-pinched switching memristor consisting of the Pt/TaOx/Ru junction structure. The non-pinched characteristics can be attributed to the capacitive-coupled memristive effect with a large number of charged Ru ions within the switching layer of the device. And, the voltage position corresponding to zero-conductance is shifted from 0.1Vto0.5V when the thickness of TaOx increased from 10 to 30 nm, indicating the change of the capacitance effect. Moreover, the fabricated device exhibited a low switching current (＜ 10µA), programming voltage (＜ 3V), high ON/OFF ratio (up to 103), and stable memory retention (＞ 104 s). This study reported another capacitance-coupled memristor type, offering its potential for future memory applications. |
