| 초록 |
We demonstrate a new device architecture for flexible vertical Schottky barrier (SB) transistors based on graphene–semiconductor–metal heterostructures and ion gel gate dielectrics. The vertical SB transistor structure was formed by (i) vertically sandwiching a semiconductor layer between graphene and metal electrodes and (ii) employing a separate coplanar gate electrode bridged with the vertical channel through an ion gel. The high intrinsic capacitance of the ion-gel gate dielectric facilitated modulation of the SB height at the graphene/channel heterojunction at a gate voltage lower than 2 V. The resulting vertical SB transistors exhibited a high current density, a high on−off current ratio, and excellent operational and environmental stabilities. The facile, large-area, and room-temperature deposition of both semiconductors and gate insulators integrates with transparent and flexible graphene opens up new opportunities for realizing graphene-based future electronics. |
