| 초록 |
Developments in surface manipulation of CsPbI3 perovskitequantum dots (PQDs) have enabled fabricating conductive PQD solids and their employing as photovoltaic(PV) absorbers in next-generation solar cells. Nevertheless, the PQD absorberssuffer from the difficulty in fabricating thick due to short carrier diffusionlength in PQD solids, thus the PQD absorbers, do not absorb a significantamount of incident light. Here, we show that introducing the nanostructures inCsPbI3-PQD solar cells increase light absorption and currentdensity while maintaining film thickness of PQD absorbers. For this, we fabricatethe nanostructures on spiro-OMeTAD hole-transporting layer using nanoimprint lithography.Also, we find that the glass transition temperature of organic molecule affectsthe fabrication of nanostructures. Thus, the nanostructured CsPbI3-PQDsolar cells show improved PV performance compared to flat control device. |
