| 초록 |
Group IV monochalcogenide (e.g., SnS, SnSe, GeS, GeSe) are a class of van der Waals layered 2D semiconductors with interesting electronic, optoelectronic, and photonic properties. As an example, Tin sulfide (SnS) exhibits a bandgap in the near IR range (1.2 eV) with a large absorption coefficient (> 104 cm-1), suggesting its potential application in light-harvesting. Leveraging its optoelectronic characteristics for enhanced device performance necessitates controllable synthetic protocols. Here, we investigate the bottom-up growth of SnS flakes using the vapor deposition approach. Upon the evaporation of SnS powders with Ar/H2 carrier gas flow, SnS flakes were deposited on muscovite mica substrate. Systemic comparison of the size and coverage of SnS islands according to the H2 flow rate and substrate temperature demonstrated that the deposition and sublimation, as well as the phase transformation of SnS flakes into SnS2, are subject to the concentration of H2 during the vapor deposition. Our result provides a new aspect of controlling group IV monochalcogenides flakes for relevant optoelectronic applications. |
