| 학회 |
한국고분자학회 |
| 학술대회 |
2002년 가을 (10/11 ~ 10/12, 군산대학교) |
| 권호 |
27권 2호, p.204 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Fabrication and characteristics of All-polymer FET using simple photolithographic patterning of electrically conducting polymer |
| 초록 |
In a simple photolithographic method, micro-patterns of conducting polymer were made on electrically insulating substrates. An oxidant film was first formed on the plastic substrate by spin coating and then exposed to UV (365 nm) through a photomask, resulting in a patterned oxidant layer. The patterned oxidant film was then exposed to pyrrole or EDOT monomer, creating a conducting micro-pattern. Using conducting polymer patterns explained above, we made All-polymer FET (field effect transistor) whose insulating layer, active layer and electrodes were composed of organic polymeric materials. Therefore, unlike existing methods, it has advantages that manufacturing process is easy and can be done in normal temperature. On the method of FET fabrication, the gate electrode was formed on the plastic substrate by the patterning method described above. A transparent polymer such as poly(vinyl cinnamate) as an insulating layer was then coated on the top of the gate electrode. Another electrically conducting polymer pattern working as not only source-drain electrodes but also active layer was finally formed on the top of the insulating layer. Our device showed the features of FET, exhibiting a depletion mode with a positive gate voltage. |
| 저자 |
이명섭1, 강한샘*2, 강현숙*3, 주진수*4, A.J Epstein**, 이준영
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| 소속 |
1성균관대, 2*고려대, 3**Department of Physics, 4The Ohio State Univ. |
| 키워드 |
FET; photolithography; conducting polymer; patterning
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| E-Mail |
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