| 초록 |
Soft electronics are attracting enormous attention for the future wearable electronics because of their excellent mechanical compatibility with soft human skin for direct skin-mounting. Among many soft devices, the soft memory device for data storage is necessary for the future intelligent soft electronic system. Although many studies for developing soft memory devices, most work involves architecture engineering such as wrinkle, serpentine, kirigami, etc., which require complicated fabrication processes and sophisticated design. Therefore, fully soft memory devices based on only soft electronic components will be an excellent alternative for future wearable electronic systems. In this work, we achieve fully soft transisotr memory devices based on patternable dielectrics for high-yield array fabrication. The fabricated memory devices show clear bistable memory properties and stable operation under mechanical strain. |
