| 초록 |
Inorganic semiconductors have attracted research attention as a promising p-type material for solar cells and thin-film transistors (TFTs) because of their small effective hole mass and solution processability at low temperatures. However, TFTs using inorganic p-type materials typically suffer from low carrier mobility, operational stability, and poor device performance. In this work, we demonstrated an effective method to control the electrical properties and we successfully fabricated p-channel thin-film transistors using the metal halide semiconductors and ionic liquid based polymer electrolyte as a gate dielectric layer. The transistors turned on and off at low voltages below 1 V owing to the high capacitance of the nano-gap capacitors at the electrolyte gate dielectric/gate electrode and electrolyte dielectric/semiconductor interfaces. In addition, device characteristics including threshold voltages, on-currents, and on-to-off current ratios were systematically investigated. |
