| 학회 |
한국공업화학회 |
| 학술대회 |
2022년 봄 (05/11 ~ 05/13, 제주국제컨벤션센터(ICC JEJU)) |
| 권호 |
26권 1호 |
| 발표분야 |
포스터-디스플레이 |
| 제목 |
Multi-State Heterojunction Transistors Based on Field-Effect Tunneling–Transport Transitions |
| 초록 |
A monolithic ternary logic transistor based on a vertically stacked double n-type semiconductor heterostructure is presented. Incorporation of theorganic heterostructure into the conventional metal-oxide-semiconductor field-effect transistor architecture induces the generation of stable multiplelogic states in the device; these states can be further optimized to be equiprobable and distinctive. A systematic investigation reveals that the electricalproperties of the device are governed by not only the conventional field-effect charge transport but also the field-effect charge tunneling at theheterointerfaces, and thus, an intermediate state can be finely tuned by independently controlling the transition between the onsets of these twomechanisms. The achieved device performance agrees with the results of a numerical simulation. The operation of various ternary logic circuits basedon the optimized multistate transistors, including the NMIN and NMAX gates, is also demonstrated. |
| 저자 |
김찬1, 임동언1, 조새벽2, 강주훈2, 조정호1
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| 소속 |
1연세대, 2성균관대 |
| 키워드 |
multi-value logic; ternary logic; multistate transistor; heterojunction; tunneling
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| E-Mail |
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