| 초록 |
The chip-scale integration of red-green-blue semiconductor light-emitting diodes (LEDs) on a flexible and wearable substrate would lead to a realization of next-generation display technology, taking advantage of outstanding device performances of the semiconductor devices, such as high brightness, low power consumption, and long-term device stability. However, because the conventional thin-film LEDs can only generate monochromatic emission due to their active region possessing uniform quantum wells, the multi-color emission is still a major challenge in inorganic displays. Moreover, high-quality LEDs have been grown on rigid single-crystal substrates at high growth temperatures over 1000°C which limits semiconductor LED displays to be flexible and/or wearable. In this presentation, the speaker will review methods to resolve these problems using mixed-dimensional heterostructures. A device platform comprising of semiconductor heteroepitaxy on the 2D layered materials was utilized for the transferable and flexible inorganic LEDs and integrated optoelectronics with electronics. The 2D layered material, such as graphene films, not only provides a good seeding layer for the high-quality semiconductor growths but also acts as an interlayer for transferring the semiconductor devices to arbitrary substrates. Furthermore, various diameters of nanopillar and micropillar LEDs were fabricated on a single chip enabled us to demonstrate monolithically addressable full-color light emitters where the color control mechanism was a local strain engineering. The device performances of the monolithically integrated full-color LEDs, including color mixing characteristics, will also be discussed. |
