| 초록 |
Here we report the effects of using a blocking dielectric layer and metal nanoparticles (NPs) as charge-trapping sites on the characteristics of organic nano-floating-gate memory (NFGM) devices. High-performance NFGM devices are fabricated using the n-type polymer semiconductor, poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)}(P(NDI2OD-T2), and NPs of various metals. These NPs are embedded within bilayers of polymer dielectrics. Top-gate/bottom-contact organic field-effect transistors exhibit high electron mobilities (~0.4cm2V-1s-1). In addition, reliable memory characteristics are obtained by embedding metallic NPs in the bilayers of the polymer dielectrics. The NFGM devices show distinct non-volatile memory characteristics, which include a wide memory window (~52V), a high on/off-current ratio (Ion/Ioff ~105), and a long retention time (>107s), depending on the choice of the blocking dielectric and the metal NPs. |
