| 학회 |
한국재료학회 |
| 학술대회 |
2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
| 권호 |
27권 2호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Characteristics of silicon oxynitride barrier films grown on poly(ethylene naphthalate) for transparent patch antenna |
| 초록 |
For the applications of transparent barrier to water vapor permeation for plastic substrate, we have prepared silicon oxynitride thin films on polyethylene naphthalate substrate at room temperature by using ion beam assisted electron beam evaporation method, and investigated their characteristics with respect to N2 flow rate in the ion source. The experimental results reveal that when N2 flow rate increases, the nitrogen concentration and Si–N bonding in SiOxNy films are increased by the virtue of assisted-N2 ion incorporations during the film deposition process. Also, with increasing N2 flow rate, surface roughness and optical transmittance of the barrier film are decreased, whereas refractive index and film density are increased. As a result, water vapor transmission rate of our barrier films decreases with the incorporation of N2 ions into the films, which may be strongly dependent to the surface roughness and film density. |
| 저자 |
Yong An Jung, Dongcheul Han, Sang Bong Byun, Sung Hun Lee, Soo Hyun Cho, Hanjae Shin
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| 소속 |
Gumi Electronics & Information Technology Research Institute |
| 키워드 |
silicon oxynitride barrier film; ion beam assisted deposition; water vapors permeation rate; polyethylene naphthalate
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| E-Mail |
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