| 초록 |
Carbon nanotube-based field effect transistors (SWNT-FETs) and diodes are potentially applicable for CMOS, memories and fast switches. As for the realization of carbon nanotube diodes, p-n junctions through selective chemical doping and asymmetric Schottky metal-nanotube contacts have been demonstrated. However, these methods need complex processes including the complicated lithography or chemical doping steps. We recently discovered that the diode property could be accomplished through the mass transport of lithium ions. From the lithium intercalated SWNT devices, diode-like I-V characteristics were observed over the bias voltage range of -10 to +10 V. The mass transport of lithium ions was confirmed by measuring the population distribution of lithium using scanning photoelectron microscopy and space-resolved X-ray photoelectron spectroscopy. |
