| 학회 |
한국재료학회 |
| 학술대회 |
2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 |
12권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
PLD 법으로 증착된 Doped SrTiO3 박막의 저항변화 연구 |
| 초록 |
Recently, the metal-insulator-metal (MIM) capacitor–like structures consisting of a wide variety of insulating perovskite oxides showed reversible resistive switching between two or multilevel resistance states induced by short voltage pulses at room temperature. In this study, we have fabricated doped SrTiO3 (STO) thin films as an insulator for MIM structure by pulsed laser deposition, and investigated the electric transport properties of doped STO thin films by the current-voltage (I-V) measurement. The MIM structure shows hysteretic behavior of I-V characteristics. The hysteretic curve is attributed to the resistive switching of doped STO thin film between high resistance state (HRS) and low resistance state (LRS) by applying dc bias voltage stress. The current and voltage ramp sweep of I-V measurement reveals that current and voltage above critical value is required for resistive change from HRS and LRS. We also report leakage current behavior of doped STO thin films with various electrodes. The I-V characteristics of MIM structure with various electrodes exhibits different hysteretic shapes. This transition metal (TM)-doped perovskite oxides showing reproducible resistive switching have been attracting considerable attention due to potential for device application such as nonvolatile resistance random-access memories. |
| 저자 |
정철호, 이재찬, 최택집, Phan Bach Thang, 박지현, 정숙진
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| 소속 |
성균관 대 |
| 키워드 |
SrTiO3; 저항변화; PLD
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| E-Mail |
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