| 학회 |
한국고분자학회 |
| 학술대회 |
2015년 봄 (04/08 ~ 04/10, 대전컨벤션센터) |
| 권호 |
40권 1호 |
| 발표분야 |
고분자구조 및 물성 |
| 제목 |
Various Digital Memory Behaviors of PVPK-BEOXD Random Copolymer Depending on The Chemical Composition |
| 초록 |
A series of random copolymers bearing elctron donor and acceptor moieties were studied, in particular their electrical memory characteristics, optical and electrical properties, morphological structures, and interfaces. The N-phenylcarbazole is an electron donor and BEOXD is an electron acceptor. Nanoscale thin films of the brush copolymers in devices were found to exhibit excellent unipolar electrical memory versatility, which can easily be tuned by tailoring the composition and by changing the film thickness. The electrical memory behaviors were found to occur via a hole injection from the electrode and to be governed by trap-limited space-charge limited conduction combined with ohmic conduction and local filament formation. Overall, the brush copolymers are very suitable active materials for the low-cost mass production of high performance, polarity-free digital memory devices that can be operated with very low power consumption, high ON/OFF current ratios, and high stability. |
| 저자 |
권경호, 김경태, 정성민, 김영용, 이진석, 송성진, 김종현, 위동우, 김창섭, 이종찬, 김용진, 이호열, 이문호
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| 소속 |
포항공과대 |
| 키워드 |
memory polymer |
| E-Mail |
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