학회 |
한국재료학회 |
학술대회 |
2015년 봄 (05/14 ~ 05/15, 구미코) |
권호 |
21권 1호 |
발표분야 |
A. 전자/반도체 재료 |
제목 |
Single crystal growth of SiC through high temperature chemical vapor deposition method using methyltriclorosilane |
초록 |
As a promising growing technique of SiC single crystal, high temperature chemical vapor deposition(HTCVD) has potential advantages to grow long crystal because this technique is based on open system. So far, HTCVD for SiC bulk crystal has used an explosive Si precursor, SiH4, which required additional attention to experimental explosion accident. In our previous study, SiC single crystal was successfully synthesized from a safe precursor, tetramethylsilane (TMS). However, TMS contains too much carbon atoms per one Si atom in a molecule, which make difficult to control the process condition of crystal growth. Hence, in this study, we explored an alternative precursor of methyltriclorosilane (MTS) for HTCVD. Thermodynamic modeling was conducted for rough process modeling and experimental validations were then carried out. |
저자 |
유창형1, 강유라1, 남덕희1, 김준규1, 이명현1, 서원선1, 정성민1, 양철웅2
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소속 |
1한국세라믹기술원 에너지환경소재본부, 2성균관대 |
키워드 |
<P>SiC; Single Crystal; HTCVD; MTS</P>
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E-Mail |
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