| 학회 |
한국재료학회 |
| 학술대회 |
2015년 봄 (05/14 ~ 05/15, 구미코) |
| 권호 |
21권 1호 |
| 발표분야 |
A. 전자/반도체 재료 |
| 제목 |
Design of high temperature chemical vapor deposition reactor to reduce the effect of the condensation of the exhaust gas in the outlet |
| 초록 |
In our previous study, tetramethylsilane (TMS) was proposed as a safe precursor in high temperature chemical vapor deposition (HTCVD) for SiC bulk crystal growth. Because TMS contains C much more than Si in its molecule, the exhaust gas from the TMS-based HTCVD definitely contains large amount of C which is condensed in the outlet. In this study, mass / heat transfer analysis using finite element method (FEM) was carried out to propose an effective reactor design to minimize the effect of the carbon condensation in the outlet. By applying the proposed reactor design to real growing experiments, 6H-SiC single crystal with 50 mm in diameter was successfully grown on a 6H-SiC seed. This result confirmed that the proposed reactor design was effective to grow 6H-SiC crystal through the TMS-based HTCVD. |
| 저자 |
윤지영1, 김병근1, 남덕희1, 유창형1, 이명현1, 서원선1, 정성민1, 설용건2, 이원재3
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| 소속 |
1한국세라믹기술원 에너지환경소재본부, 2연세대, 3동의대 |
| 키워드 |
HTCVD; SiC; Single Crystal; FEM; TMS
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| E-Mail |
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