| 학회 | 한국재료학회 |
| 학술대회 | 2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
| 권호 | 27권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Enhanced percolation of switchable metallic domain in metal-nanoparticle-embedded Mott switches |
| 초록 | Threshold switching have gathered a lot of interest for promising applications to resolve the inevitable bottleneck in the state-of-the-art electronic devices. Mott threshold switches call for exquisite control of electrically switchable nanoscale-domains for the percolative dynamics. An effective metallic-domain-percolation method is required to allow an electrically triggered insulator-to-metal transition in threshold switches. In this presentation, we demonstrate the permanent metal nanoparticles (NP) embedded epitaxial VO2 Mott switches that was encouraged metastability and percolation of metallic domains in VO2. The VO2 films in Pt-NP-VO2 system were single-crystal-like grown on Pt-embedded TiO2 substrates through selective nucleation and lateral overgrowth. Significantly, the power consumption of the Pt-NPs-VO2 Mott switch was reduced by half in consequence of the threshold voltage reduction. Moreover, the switch offers 33.3 times longer memorization of preformed threshold metallic conduction path (i.e., firing) in the VO2 film. These results provide an essential strategy to utilize the geometric development of switchable domains in electrically turned-on transition and possible applications for energy-efficient switches and non-Boolean computing using quantum materials. |
| 저자 | 조민국, 손준우 |
| 소속 | 포항공과대 |
| 키워드 | Percolation; Mott switch; Threshold switch; VO<SUB>2</SUB>; Nanoscale-domain |
