| 학회 |
한국화학공학회 |
| 학술대회 |
2016년 가을 (10/19 ~ 10/21, 대전컨벤션센터) |
| 권호 |
22권 2호, p.2200 |
| 발표분야 |
재료 |
| 제목 |
Carrier transport property of photo-chemically etched a-pane GaN and its hydrogen response for gas sensor |
| 초록 |
The PC (photo-chemical) etching technique is a widely used method in conventional c-plane GaN based light emitting diode fabrication to enhance the light extraction through surface texturing. This facile wet etching of GaN is a repetitive process involving the formation of gallium oxide and dissolution of the oxide in an alkali etchant solution under UV illumination. After PCE of GaN, most of the stable specific crystal planes are exposed, resulting in the textured morphology with huge increased surface area. Hence, the PC etching is one of effective methods to enhance the sensitivity of GaN based sensor devices by offering more active sites for target sensing molecules. In this work, carrier transport property of PC etched a-pane GaN and its hydrogen sensing response were studied. The PC etched a-plane GaN surface showed a striated surface morphology with triangular prisms along c-axis direction with m-plane facets. The sheet resistance of etched GaN along c-axis was lower than m-axis regardless of basal stacking faults. The remarkably improved hydrogen response of the PC etched a-plane GaN sensor was observed with maximum sensitivity of 107%. |
| 저자 |
이소현1, 정선우1, 이미라1, 백광현2, 장수환1
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| 소속 |
1단국대, 2홍익대 |
| 키워드 |
센서 및 소자 |
| E-Mail |
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| 원문파일 |
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