| 학회 | 한국재료학회 |
| 학술대회 | 2015년 봄 (05/14 ~ 05/15, 구미코) |
| 권호 | 21권 1호 |
| 발표분야 | G. 나노/박막 재료 |
| 제목 | Semiconducting properties of zinc tin oxide (ZnSnO3) thin films deposited by facing-target radio-frequency (RF) sputtering |
| 초록 | Oxide semiconductors such as ZnO, SnO2, In2O3, CdO and TiO2 have high quality electrical and optical properties. The zinc oxide and tin oxide, which showed n-type semiconducting properties, have wide range of applications in solar energy conversion, catalysis, gas sensing, antistatic coating and transparent electrode preparation. ZnO is generally used as a semiconductor because of its excellent electrical properties, thermal stability, high electron mobility and low cost. SnO2 has low electrical resistivity, high optical transmittance and good chemical stability. Zinc Tin Oxide (ZTO, ZnSnO3) were prepared to utilize the combined advantages of both ZnO and SnO2. In order to obtain high mobility, ZTO films were deposited by off-axis RF sputtering onto the transferred graphene. The semiconducting properties of the deposited samples were investigated by using the hall effect. The physical properties of the samples were investigated using the X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). |
| 저자 | 이세희, 윤순길 |
| 소속 | 충남대 |
| 키워드 | semiconductor; RF sputtering; Zinc Tin Oxide |
