| 초록 |
In this work, all plastic memory device in RFID Tag using organic field effect transistors with MISFET structure was fabricated. Integrated circuits for memory device consisted of 5 stage ring oscillators which was made of 11 all plastic FETs. In the FET device with top gate structure, PEDOT/PSS and PANI/CSA dispersions were used to make the electrodes and regio-regular poly(3-hexylthiophene) and polyvinylalcohol were used as semiconducting and insulating materials, respectively. FET devices showed the field effect mobility of 7.5 ×10-2cm2/Vs and Ion/Ioff ratio of 3.0 × 102. Frequencies measured from all plastic ring oscillator were in the range of 1 ~ 3 KHz. |
