| 초록 |
Polyimide film (PI) used in advanced microelectronics, aerospace and printed circuit industries due to their excellent thermal stability, mechanical and dielectric properties. In this paper, effect of ion implantation on the surface properties of polyimide was studied. Irradiation of argon ion beam on polyimide film was performed. The acceleration voltage was 100 keV for argon beam and dose range from 1ⅹ1015 to 1ⅹ1017 ion/cm2. The surface morphology of polyimide film was characterized by X-ray photoelectron spectroscopy (XPS) before and after ion implantation. |
