| 초록 |
Developing narrow band organic photodiode (OPD) has become an important research issue for realizing full color imaging devices. While green- and blue-selective photodiodes have been successfully demonstrated by using various combinations of organic semiconductors, high performance red-selective OPD has been rarely reported. Here we demonstrate a red-selective solution processed thin film OPD with high detectivity by introducing the strategy of selective exciton extraction via p-i-n junction structure. To achieve red-selective p-i-n junction architecture, carefully controlled layer-by-layer deposition of poly (3-hexylthiophene-2, 5-diyl) and [6,6]-phenyl C61 butyric acid methyl ester was conducted. Thanks to the well-defined p-i-n junction structure which is able to not only induce red-selective exciton extraction as proved by transfer-matrix optical simulations but also efficiently blocks injection of non-allowed charge carriers, the resulting red-selective OPD demonstrated narrow FWHM and very low dark current without sacrificing high photo current density. |
