| 학회 |
한국고분자학회 |
| 학술대회 |
2013년 가을 (10/11 ~ 10/12, 창원컨벤션센터) |
| 권호 |
38권 2호 |
| 발표분야 |
기능성 고분자 (포스터발표만 진행) |
| 제목 |
Multi-bit Non-volatile Polymer Memory with Solution-blended Ferroelectric Polymer Insulators for Low Voltage Operation |
| 초록 |
We present a low voltage operating Multi-bit polymer Fe-FET memory with a high k ferroelectric polymer insulator. Effective enhancement of capacitance of the ferroelectric gate insulator layer was achieved by a simple binary solution-blend of a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) (k~8) with a relaxer high-k poly(vinylidene-fluoride–trifluoroethylene–chlorotrifluoroethylene) (PVDF-TrFE-CTFE) (k~18). At optimized conditions, a ferroelectric insulator with a PVDF-TrFE/PVDF-TrFE-CTFE (10/5) blend composition enabled the discrete six-level multi-state operation of a Multi-bit Fe-FET at a gate voltage sweep of 18 V with excellent data retention and endurance of each state of more than 104 seconds and 120 cycles, respectively. |
| 저자 |
황선각, 박철민, 배인성, 김한기, 김강립
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| 소속 |
연세대 |
| 키워드 |
Organic memory; Ferroelectric polymer; high-k polymer; Multilevel memory; Field effect transistor memory
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| E-Mail |
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