| 초록 |
In the photovoltaic industry, crystalline silicon (c-Si) solar cells using screen-printing technology share the global market over 90%. To realize high efficiency, industrial c-Si solar cells have been developed and consequently interested in n-type wafer-based Si cell technologies, and various cell structures (PERL, HIT). Here, a novel passivation technology reducing the recombination of carriers is important to improve solar cell performance. Especially, tunnel oxide passivated contact (TOPCon) solar cells have been observed to reduce the recombination generated in silicon/back surface field (BSF) layer/metal by inserting ultra-thin SiOx layer between silicon and metal contact. In this study, passivated contact technologies that can improve efficiency(＞22%) are summarized. Moreover, studies on the relations between the poly-Si layer and tunnel oxide (SiOx), hydrogenation are examined with suggesting new hybrid solar cell structure combined with two passivating contact technologies. |
