| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 가을 (10/06 ~ 10/07, 김대중 컨벤션센터) |
| 권호 |
36권 2호 |
| 발표분야 |
유기전자소자용 소재 및 소자(분자전자소재 부문위원회) |
| 제목 |
Structure, Interface and Nonvolatile Memory Characteristics of a High Temperature Polyimide Containing Anthracene Moieties |
| 초록 |
A high temperature polyimide (PI) bearing anthracene moieties, 6F-HAB-AM PI, was synthesized. The PI exhibits excellent thermal stability up to 400 °C. This PI is amorphous, but orients preferentially in the plane of the nanoscale thin films. In device fabrications of its nanoscale thin films with metal top and bottom electrodes, no diffusion of the metal atoms or ions between the PI and electrodes was found. The aluminum bottom electrode, though, had undergone thin oxide layer formation at the surface during fabrication process, which had no critical effect on the device performance. The PI thin film exhibited excellent unipolar/bipolar switching over a voltage range order of ±2 V. Further, the PI-based thin film electronic devices showed repeatable write-read-erase ability with long time reliability and high ON/OFF current ratio in ambient conditions as well as even at temperatures up to 200 °C. |
| 저자 |
김경태, 박삼대, 김동민, 김진철, 정정운, 노예철, 안병철, 권원상, 김미희, 고용기, 정성민, 이문호
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| 소속 |
POSTECH 화학과 |
| 키워드 |
nonvolatile memory; polymer thin film; polymer-metal interface; flash memory
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| E-Mail |
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