| 초록 |
In this study, we have investigated physical and chemical properties in order to fabricate high quality CIGS thin film. We prepared CIGS precursor solution in distilled water. The substrate temperature was maintained at 200 ℃ during the spray. The deposited CIGS thin films were dried ambient temperature for 15 minutes. The crystallinity of depositing CIGS thin films were examined by X-ray diffraction (XRD). The transmittance spectra were obtained by uv-vis spectroscopy. Scanning electron microscopy (SEM) was used for detection of grain size and particle shape in the CIGS thin films. The crystal type of prepared CIGS thin films had a chalcopyrite structure. The crystal orientations was found with the peaks in direction (112), (220)/(204), (312)/(116), (400), (332)/(316), and (424). Based on our approach, we have successfully obtained CIGS thin film which was dense, smooth and compact formation and the grain size was also large. |
