| 학회 | 한국재료학회 |
| 학술대회 | 2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 | 26권 1호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Tailoring the charge transport at ZnO/Oxide interfaces for high performance of field-effect-transistor |
| 초록 | The ZnO thin film was growth by atomic layer deposition (ALD) method, which showed the surface defect-formation and limited to control the top gate devices.[1] Our work suggests the self-assembly of molecule (SAM) buffer layer is suitable for tailoring the charge transports in ZnO film by proving the semiconducting behavior of the resistance at interface. We further report the robust fabrication of ZnO top gate field-effect transistors (TG-FET) arrays by using thin SAM buffer layer Al2O3 as top gate oxide. In this study, our devices showed 100,000 higher of on/off ratio compared to device without buffer layer. Using this new platform, we demonstrated a large scale of transistors arrays with ultra-high on/off ratio. References 1. Y. Y. Lin, C. C. Hsu, M. H. Tseng, J. J. Shyue, and F. Y. Tsai, ACS Appl. Mater. Interfaces 7, 22610-22617 (2015). |
| 저자 | 김형진, 유우종 |
| 소속 | 성균관대 |
| 키워드 | <P>Field-effect-transistor; FET; ZnO</P> |
