| 학회 |
한국재료학회 |
| 학술대회 |
2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 |
26권 1호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Mo 유연기판을 이용한 Cu2ZnSn(S,Se)4 (CZTSSe) 박막 태양전지에서 Zn(O,S) 버퍼층 증착온도의 효과Effect of Zn(O,S) buffer layer deposition temperature on the performance of flexible Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells |
| 초록 |
In Cu2ZnSn(S,Se)4 (CZTSSe) solar cells, Zn(O,S) is a promising candidate to replace CdS buffer, which has a toxicity problem with a wide band gap and non-toxic material. In addition, alternative Cd-free buffer layers deposited by Atomic Layer Deposition (ALD) may be more advantageous for industrial production compared to Chemical Bath Deposition (CBD) processes, primarily due to less chemical waste and the possibility of a complete vacuum-based production line. In this work, a CZTSSe solar cell with Zn(O,S) buffer was fabricated on a flexible substrate using the ALD method. The effect of the deposition temperature of Zn(O,S) on the CZTSSe solar cell was investigated. By setting the ZnO:ZnS ratio to 9:1, the O/(O+S) ratio was fixed, and the deposition thickness was 20 nm. The deposition temperature of Zn(O,S) was 80 ℃, 90 ℃ and 100 ℃ respectively. The highest Power Conversion Efficiency (PCE) is 5.37%, compared to 6.89% of a reference solar cell with a chemical bath deposited CdS buffer layer. |
| 저자 |
Kim Su Gil1, Jin Hyeok Kim2
|
| 소속 |
1CHONNAM NATIONAL Univ. the Department of Materials Science and Engineering, 2CHONNAM NATIONAL Univ. Optoelectronics Convergence Research Center |
| 키워드 |
Cu<SUB>2</SUB>ZnSn(S; Se)<SUB>4</SUB>; Thin film solar cell; Zn(O; S); Flexible substrate; Mo foil
|
| E-Mail |
|
