| 학회 |
한국재료학회 |
| 학술대회 |
2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 |
22권 2호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Synthesis of N-dopoed Graphene on SiC substrate by Pulsed Laser Annealing |
| 초록 |
In the carbon material studies, chemically doped graphene has been studied to applicate high performance electronic device. Gas-phase doping on graphene by chemical vapor deposition (CVD) requires complicated transfer process which can cause unintentional doping and defects creation. In this work, we report a solid-phase synthesis of N-doped graphene on N-doped silicon carbide (SiC) substrate by pulsed laser (XeCl, 308nm) irradiation. Laser-induced synthesis provides a direct growth of nitrogen doped graphene on an insulating substrate without additional transfer procedure. The XPS analysis demonstrates that the C-N bonding conformation of the N-doped graphene was pyridinic-N type. Also, G band shift in Raman spectra shows that solid-phase doping can provide precise controllability of doping concentration by changing the dopant concentration of the SiC substrate |
| 저자 |
TaeHong Im1, Keon Jae Lee2
|
| 소속 |
1Departmet of Materials Science and Engineering, 2KAIST |
| 키워드 |
<P>Graphene; Pulsed Laser Annealing; N-doped Graphene; Excimer Laser</P>
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| E-Mail |
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