| 초록 |
Graphitic carbon nitride (g‐C3N4) issued tunable electronic semiconductor, which are attracted by visible‐light activity, facile synthesis from low‐cost materials, chemical stability, and unique layered structure. The two-dimensional g-C3N4 has suitable band gap (about 2.83eV) that expects to enhance photocurrent density under the visible light. However, the pristine g-C3N4 has the low charge transportation efficiency and chemical instability. Hence, we fabricated g-C3N4 in the form of porous heterostructure photocatalysts. The slurry from photocatalysts was loaded on to the FTO glass surface by doctor-blade method. The thin photocatalytic film added n-type components via the spin coating method. It provides versatile photoelectrochemical properties for the efficient design of visible light active photocatalysts and promising electrode materials for H2 evolution and environmental remediation. |
