| 학회 | 한국재료학회 |
| 학술대회 | 2004년 가을 (11/05 ~ 11/05, 인하대학교) |
| 권호 | 10권 2호 |
| 발표분야 | 반도체 II(화합물) |
| 제목 | GaN용 사파이어기판에 주입된 이온 변화에 대한 비교 |
| 초록 | GaN-based materials and related nitride compounds have many attractive chemical and physical properties by using in high temperature and high power electronic as well as blue and ultraviolet light emitting diodes (LEDs) and laser diodes (LDs). Also, the wurtzite GaN structure has several advantages including direct bandgap of 3.4 eV at room temperature for high efficiency in optoelectronic devices, high radiation hardness, and complete solubility among the binary compounds and forms a continuous solid solution with InN and AlN, which have the same wurtzite structure and direct band gap of 1.9 and 6.2 eV, respectively. α-Al2O3 single crystal has been common substrate for growing GaN epilayers despite its large lattice-mismatch and thermal expansion coefficient between GaN epilayers and sapphire substrate. Because of a large mismatch between GaN and sapphire(0001) substrate, to deposit a high quality GaN epilayers is required a buffer layer typically grown at low temperature. The nitridation processes have been mainly explained by the chemical change of the sapphire surface was tentatively attributed to the transformation of Al2O3 into AlN or AlON. The aim of this work is to study the effects of various ion-implanted sapphire(0001) substrate on GaN epilayers grown by metal organic chemical vapor deposition (MOCVD). The chemical and physical changes of sapphire(0001) substrate were carried out for reducing stress fields due to the mismatch in lattice constants and thermal expansion coefficient between GaN epilayers and sapphire(0001) substrate. H+, He+, Ar+, As+ and Xe+, as a pretreatment technique with different energies and same doses were intentionally implanted into sapphire(0001) substrate, respectively. The properties of GaN epilayers were studied by AFM, DCXRD, Hall Measurement, PL and RAMAN. It is our intention to examine the possibility of employing various ion-implnated saphire(0001) substrate to achieve the quality of GaN epilayers grown by MOCVD. Table 1 The implantation schedules of H+, He+, Ar+, As+ and Xe+. |
| 저자 | 진정근1, 이재석1, 노대호1, 변동진1, 이재상2, 이재형2, 고의관3 |
| 소속 | 1고려대, 2한국원자력(연), 3한국기초과학지원(연) |
| 키워드 | GaN; implantation; MOCVD |
