| 학회 | 한국재료학회 |
| 학술대회 | 2005년 봄 (05/26 ~ 05/27, 무주리조트) |
| 권호 | 11권 1호 |
| 발표분야 | 전자재료 |
| 제목 | 질소, 수소 가스가 이산화규소 나노와이어의 성장에 미치는 영향 |
| 초록 | Various kinds of one-dimensional structures, such as carbon nanotubes, semiconductor nanowires and oxides have become the focus of intensive research owing to their unique applications in mesoscopic physics and the fabrication of nanoscale devices. In particular, SiO2 nanowires have attracted considerable attention in recent years due to their novel physical properties and great potential for optoelectronics. In this report, SiO2 nanowires were synthesized using the vapor evaporation method. The kind of the gas affected Growth of SiO2 nanowires. Diameter and length of SiO2 nanowires grown by vapor evaporation observed 20~60nm and several micrometer. The morphology and structures of SiO2 nanowires were characterized by scanning electron microscopy, transmission electron microscopy and high-resolution TEM. Optical property were measured by photoluminescence spectroscopy. This research was supported by a grant (code # : o4K1501- 03110) from 'Center of Nanostructured Materials Technology' under '21st Century Frontier R&D Programs' of Ministry of Science and Technology, Korea. |
| 저자 | 김나리1, 김재수2, 변동진1, 노대호1, 양재웅3, 이재훈4 |
| 소속 | 1고려대, 2한국과학기술(연), 3대진대, 4생산기술(연) |
| 키워드 | 이산화규소 나노와이어; 분위기 가스; 기상휘발법 |
